InGaAsP/InP dual wavelength lasers
The first successful dual wavelength lasers emitting at 1.2 μm and 1.3 μm wavelengths are described. The lasers operated up to 0°C.
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The first successful dual wavelength lasers emitting at 1.2 μm and 1.3 μm wavelengths are described. The lasers operated up to 0°C.
Inspec keywords: gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors
Other keywords:
Subjects: Design of specific laser systems; Lasing action in semiconductors; Semiconductor lasers
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