Ion-implanted E/D-type GaAs IC technology

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Ion-implanted E/D-type GaAs IC technology

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© The Institution of Electrical Engineers
Published

An enhancement/depletion-type GaAs MESFET IC technology has been developed using selective ion implantation into SI GaAs. By reducing the source-gate and the drain-gate spacings down to about 0.4 μm, the unfavourable effect of the surface state1 was effectively lowered, while guaranteeing sufficient breakdown voltages. The minimum propagation delay of 66 ps was achieved in a 15-stage ring oscillator with 1.2 μm-long gate FETs.

Inspec keywords: large scale integration; gallium arsenide; III-V semiconductors; Schottky gate field effect transistors; integrated circuit technology; field effect integrated circuits; ion implantation

Other keywords: propagation delay; LSI; enhancement/depletion-type GaAs MESFET IC technology; selective ion implantation; ring oscillator; III-V semiconductor

Subjects: II-VI and III-V semiconductors; Other field effect integrated circuits; Semiconductor doping

References

    1. 1)
      • W.E. Spicer , P.W. Chye , P.R. Skeath , C.Y. Su , I. Lindau . New and unified model for Shoffky barrier and III-V insulator interface state formation. J. Vac. Sci. Technol. , 1422 - 1433
    2. 2)
      • F. Katano , T. Furutsuka , A. Higashisaka . High speed normally-off GaAs MESFET integrated circuits. Electron. Lett. , 6 , 236 - 237
    3. 3)
      • Ogawa, M., Ishikawa, M.: `Method of manufacturing a semiconductor device having closely spaced electrodes by perpendicular projection', 3 994 758, 30 November 1976, US patent.
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