Selective carrier removal using oxygen implantation in GaAs
Selective carrier removal using oxygen implantation in GaAs
- Author(s): M. Berth ; C. Venger ; G.M. Martin
- DOI: 10.1049/el:19810609
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- Author(s): M. Berth 1 ; C. Venger 1 ; G.M. Martin 1
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View affiliations
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Affiliations:
1: Laboratoires d'Electronique et de Physique Appliquée, Limeil-Brévannes, France
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Affiliations:
1: Laboratoires d'Electronique et de Physique Appliquée, Limeil-Brévannes, France
- Source:
Volume 17, Issue 23,
12 November 1981,
p.
873 – 874
DOI: 10.1049/el:19810609 , Print ISSN 0013-5194, Online ISSN 1350-911X
It has been reported that free-carrier compensation can be achieved using oxygen implantation and can remain stable even after annealing at temperatures up to 900°C. It is demonstrated that carrier removal rate is drastically dependent on the initial donor species. It is very likely that carrier removal in Si-doped layers takes place via formation of Si-O complexes.
Inspec keywords: ion implantation; carrier density; III-V semiconductors; semiconductor doping; gallium arsenide; oxygen
Other keywords:
Subjects: Electrical conductivity of II-VI and III-V semiconductors; II-VI and III-V semiconductors; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Doping and implantation of impurities; Semiconductor doping
References
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