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Low-dose Si ion implantation into semi-insulating LEC GaAs

Low-dose Si ion implantation into semi-insulating LEC GaAs

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© The Institution of Electrical Engineers
Published

Electrical properties of low-dose (1012–1013 cm−2) Si ion implanted n-layers in lightly Cr-doped and undoped semi-insulating GaAs were evaluated by taking into consideration the surface depletion The activation efficiency and residual acceptor-like impurity concentration of implanted layers were investigated.

Inspec keywords: ion implantation; semiconductor doping; III-V semiconductors; gallium arsenide; silicon

Other keywords: activation efficiency; semiconductor; low-dose Si ion implantation; undoped semi-insulating GaAs; residual acceptor-like impurity concentration; semi-insulating LEC GaAs; Cr-doped semi-insulating GaAs

Subjects: Semiconductor doping; II-VI and III-V semiconductors; Doping and implantation of impurities

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