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Low-dose Si ion implantation into semi-insulating LEC GaAs

Low-dose Si ion implantation into semi-insulating LEC GaAs

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Electrical properties of low-dose (1012–1013 cm−2) Si ion implanted n-layers in lightly Cr-doped and undoped semi-insulating GaAs were evaluated by taking into consideration the surface depletion The activation efficiency and residual acceptor-like impurity concentration of implanted layers were investigated.

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