High-efficiency millimetre-wave silicon impatt oscillators

High-efficiency millimetre-wave silicon impatt oscillators

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High-efficiency impatt devices and oscillators have been fabricated from epitaxially grown silicon for operation in the frequency range 40–140 GHz. These devices have produced world state-of-the-art efficiencies and demonstrated the expected relative frequency insensitivity of silicon. Single drift devices have given efficiencies of approximately 8%; and double drift device efficiencies as high as 13.5% at 50 GHz and 12% at 90 GHz. Initial measurements show that the sideband phase noise levels follow a constant deviation law.


    1. 1)
      • Elta, M.E.: `High frequency calculations of impatt and tunnet diodes', Proc. 7th Cornell Elec. Eng. Conference, 1979, p. 401–411.
    2. 2)
      • A.M. Howard , D.J. Smith , J.J. Purcell . Epitaxially grown double-drift silicon impatt diodes at 60 to 90 GHz. Electron. Lett. , 21 , 443 - 445
    3. 3)
      • G. Gibbons . (1973) , Avalanche diode microwave oscillators.
    4. 4)
      • Application note 935, Hewlett Packard Ltd..

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