Mn as a p-type dopant in In0.53Ga0.47As on InP substrates

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Mn as a p-type dopant in In0.53Ga0.47As on InP substrates

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© The Institution of Electrical Engineers
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Mn has been used as a p-type dopant in LPE In0.53Ga0.47As. The distribution coefficient was measured as 0.6 and the activation energy was 52.5±2.5 meV. The room temperature mobility varied from 183 to 94 cm2 V−1s−1 in the concentration range studied. A solid to solid diffusion coefficient of 2.6×10−12 cm2 s−1 was estimated for Mn into the substrate at 640°C.

Inspec keywords: diffusion in solids; manganese; III-V semiconductors; gallium arsenide; indium compounds; carrier mobility; semiconductor doping; doping profiles

Other keywords: activation energy; p-type dopant; InP substrates; room temperature mobility; solid to solid diffusion coefficient; distribution coefficient; In0.53Ga0.47As; Mn dopant; LPE; semiconductor

Subjects: Doping and implantation of impurities; Semiconductor doping; Diffusion, migration, and displacement of impurities in solids; Impurity concentration, distribution, and gradients; II-VI and III-V semiconductors

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