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InP Gunn oscillators in V-band

InP Gunn oscillators in V-band

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© The Institution of Electrical Engineers
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Output powers of 200 mW and efficiencies up to 6.5% have been achieved with CW InP Gunn oscillators in V-band (50–75 GHz). Fixed frequency as well as frequency tunable oscillators have been developed. Tuning bandwidths of 19% and 6.1% have been achieved with mechanical and varactor tuning, respectively.

Inspec keywords: Gunn oscillators; indium compounds; III-V semiconductors

Other keywords: InP Gunn oscillators; varactor tuning; V-band; tuning bandwidth; III-V semiconductor; mechanical tuning; frequency tunable oscillators

Subjects: Bulk effect devices; Solid-state microwave circuits and devices; Oscillators

References

    1. 1)
      • C. Sun , E. Benko , J.W. Tully . A tunable high power V-band oscillator. IEEE Trans. , 512 - 514
    2. 2)
      • T.G. Ruttan . High frequency Gunn Oscillators. IEEE Trans. , 142 - 144
    3. 3)
      • T.G. Ruttan . Gunn-diode oscillator at 95 GHz. Electron. Lett. , 14 , 293 - 294
    4. 4)
      • J.D. Crowley , J.J. Sowers , B.A. Janis , F.B. Fank . High efficiency 90 GHz InP Gunn oscillators. Electron. Lett. , 18 , 705 - 706
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