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Improved performance of 4K SRAM by means of CW laser annealing

Improved performance of 4K SRAM by means of CW laser annealing

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A 4K × 1 NMOS static RAM (MM2147) has been successfully fabricated by means of CW laser annealing. The access time was reduced by 10 ns compared with a thermally annealed control with no increase in power dissipation. This report demonstrates the feasibiligy of using CW laser annealing as a potential VLSI process technology.

References

    1. 1)
      • A. Gat , J.F. Gibbons . A laser-scanning apparatus for annealing of ion implantation damage in semiconductor. Appl. Phys. Lett. , 142 - 144
    2. 2)
      • A. Gat , L. Gerzberg , J.F. Gibbons , T.J. Magee , J. Peng , J.D. Hong . CW laser anneal of polycrystalline silicon: crystalline structure, electrical properties. Appl. Phys. Lett. , 775 - 778
    3. 3)
      • T.C. Teng , J.D. Merritt , J. Velez , J. Peng , L. Palkuti . Short-channel polysilicon-gate MOSFETs fabricated by CW argon laser annealing of arsenic implanted source and drain. Electron. Lett. , 12 , 477 - 478
    4. 4)
      • Teng, T.C., Skinner, C., Shiau, Y., Deornellas, S., Readdie, J., Peng, J.: `Laser anneal processed MOSFETs using antireflection effect of SiO', 80-2, Extended Abstracts, Electrochemical Society Meeting, 1980, Hollywood, Florida, p. 1086–1087.
    5. 5)
      • T.C. Teng , Y. Shiau , Y.S. Chen , C. Skinner , J. Peng , L. Palkuti . (1981) Characterization of ion-implanted SiO, Laser and electron-beam solid interactions and materials processing.
    6. 6)
      • A. Gat . (1979) , CW laser annealing of ion-implanted single crystal silicon.
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