Improved performance of 4K SRAM by means of CW laser annealing

Improved performance of 4K SRAM by means of CW laser annealing

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A 4K × 1 NMOS static RAM (MM2147) has been successfully fabricated by means of CW laser annealing. The access time was reduced by 10 ns compared with a thermally annealed control with no increase in power dissipation. This report demonstrates the feasibiligy of using CW laser annealing as a potential VLSI process technology.


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