High current gain in monolithic hot-electron transistors

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High current gain in monolithic hot-electron transistors

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© The Institution of Electrical Engineers
Published

Monolithic hot-beam transistors have been made in silicon with a current gain of 20 and a MAG>20 dB. Hot electrons are injected at approximately 1.7 eV, cross a ∼250 Å wide degenerate base and surmount a 0.4 eV collector barrier.

Inspec keywords: bipolar transistors; ion implantation; hot carriers

Other keywords: Si; bipolar transistors; elemental semiconductors; monolithic hot-electron transistors; current gain

Subjects: Bipolar transistors; Semiconductor doping

References

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      • J.M. Shannon . Hot-electron camel transistor. IEE J. Solid-State & Electron. Devices , 5 , 142 - 144
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      • B.K. Ridley . The diffusion of hot electrons across a semiconductor base. Solid-State Electron.
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