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High current gain in monolithic hot-electron transistors

High current gain in monolithic hot-electron transistors

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Monolithic hot-beam transistors have been made in silicon with a current gain of 20 and a MAG>20 dB. Hot electrons are injected at approximately 1.7 eV, cross a ∼250 Å wide degenerate base and surmount a 0.4 eV collector barrier.

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