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Minority-carrier injection into diffused region of small n+-p junction

Minority-carrier injection into diffused region of small n+-p junction

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© The Institution of Electrical Engineers
Published

A comparison is made between one- and two-dimensional analysis of injection into the diffused region of small n+-p diodes using a numerical iterative scheme. Results are presented which show clearly the limitation of the one-dimensional analysis.

Inspec keywords: p-n junctions; minority carriers; semiconductor diodes

Other keywords: numerical iterative scheme; n+-p junction; diffused region; small n+-p diodes; minority-carrier injection

Subjects: Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Semiconductor junctions

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