Variation of diffused boron concentration in the neighbourhood of an oxide-masked edge

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Variation of diffused boron concentration in the neighbourhood of an oxide-masked edge

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© The Institution of Electrical Engineers
Published

The concentration of boron diffused into silicon from a vapour source is found to be affected by the presence of masking oxide. Both spreading resistance and infra-red free-carrier emission techniques have been used to study the effect, and a decrease of about 15° in carrier concentration is observed close to the oxide-masked edge.

Inspec keywords: elemental semiconductors; doping profiles; boron; silicon

Other keywords: vapour source; Si:B; elemental semiconductors; spreading resistance; semiconducting doping; oxide-masked edge; infra-red free-carrier emission techniques

Subjects: Elemental semiconductors; Impurity concentration, distribution, and gradients; Semiconductor doping; Lithography (semiconductor technology)

References

    1. 1)
      • S.A. Abbasi , A. Brunnschweiler . The effect of masking oxide on the diffusion of boron into silicon. IEE Proc. I, Solid-State & Electron Devices
    2. 2)
      • S.A. Abbasi , A. Brunnschweiler . Resolution of spreading-resistance measurements on shallow layers. Electron. Lett. , 10 , 290 - 292
    3. 3)
      • J.C. White , J.G. Smith . Observation of carrier densities in silicon devices by infra-red emission. J. Phys. E , 817 - 825
    4. 4)
      • S.A. Abbasi , A. Brunnschweiler . Correction of spreading resistance data obtained from bevelled shallow junctions. Electron. Lett. , 13 , 507 - 508
    5. 5)
      • Abbasi, S.A., Brunnschweiler, A.: `The effects of oxide masking on boron deposition', Europhysics Conference Abstracts 4H, ESSDERC, September 1980, York, p. 180–181.
    6. 6)
      • : `NBS special publication 400-10', Spreading Resistance Symposium, 13–14 June 1974.
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