Diffusion of transition elements in GaAs and InP

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Diffusion of transition elements in GaAs and InP

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© The Institution of Electrical Engineers
Published

A technique is presented for studying the diffusion of iron and chromium in GaAs and InP at temperatures down to 600°C. The technique is reproducible, and results are presented which show that in all four cases very fast diffusion occurs.

Inspec keywords: indium compounds; III-V semiconductors; semiconductor doping; iron; diffusion in solids; gallium arsenide; chromium

Other keywords: diffusion of transition elements; Fe diffusion; Cr diffusion; semiconductor doping; GaAs; InP

Subjects: Diffusion, migration, and displacement of impurities in solids; Semiconductor doping; II-VI and III-V semiconductors

References

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      • B. Tuck , G.A. Adegboyeoa , P.R. Jay , M.J. Cardwell . (1978) , Out-diffusion of chromium from GaAs substrates.
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