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A technique is presented for studying the diffusion of iron and chromium in GaAs and InP at temperatures down to 600°C. The technique is reproducible, and results are presented which show that in all four cases very fast diffusion occurs.
Inspec keywords: indium compounds; III-V semiconductors; semiconductor doping; iron; diffusion in solids; gallium arsenide; chromium
Other keywords:
Subjects: Diffusion, migration, and displacement of impurities in solids; Semiconductor doping; II-VI and III-V semiconductors