Cavity length dependence of differential quantum efficiency of GaInAsP/InP lasers

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Cavity length dependence of differential quantum efficiency of GaInAsP/InP lasers

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© The Institution of Electrical Engineers
Published

The cavity length dependence of the differential quantum efficiency ηd of 1.58 μm wavelength GaInAsP/InP buried heterostructure lasers was investigated theoretically and experimentally. Theoretical calculations of ηd taking intervalence band absorption into account is in agreement with the measured results, in which ηd increases with decreasing the cavity length. The maximum value of ηd obtained was 53% for the cavity length of 100 μm in pulsed operation at room temperature.

Inspec keywords: semiconductor junction lasers

Other keywords: differential quantum efficiency; intervalence band absorption; cavity length dependence; GaInAsP-InP buried heterostructure lasers

Subjects: Lasing action in semiconductors; Laser resonators and cavities; Semiconductor lasers; Laser resonators and cavities

References

    1. 1)
      • S. Arai , M. Asada , Y. Suematsu , Y. Itaya , T. Tanbun-ek , K. Kishino . New 1.6 μm wavelength GaInAsP/InP buried heterostructure lasers. Electron. Lett. , 10 , 349 - 350
    2. 2)
      • M. Asada , A.R. Adams , K.E. Stubkjaer , Y. Suematsu , Y. Itaya , S. Arai . The temperature dependence of the threshold current of GaInAsP/InP DH lasers. IEEE J. Quantum Electron.
    3. 3)
      • Moriyama, T., Fukuda, O., Sanada, K., Inada, K., Tanaka, S., Chida, K., Edahiro, T.: `Fabrication of ultra-low-OH content optical fibres with VAD method', 6th European conf. on opt. com., p. 18–21.
    4. 4)
      • A.R. Adams , M. Asada , Y. Suematsu , S. Arai . The temperature dependence of the efficiency and threshold current of In1−xGaxASyP1−y lasers related to intervalence band absorption. Jpn. J. Appl. Phys. , L621 - L624
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