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Schottky-barrier elevation by ion implantation and implant segregation

Schottky-barrier elevation by ion implantation and implant segregation

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PtSi Schottky barriers on n-type silicon have been formed with barrier heights up to 1 V, using a thin p-type interfacial layer for barrier elevation. The p-type layers are formed via shallow ion-implantation, followed by segregation to the metal-silicon interface when the silicide is formed. This results in extremely thin p-regions that enable the diodes to have near ideal forward current/voltage characteristics, with n-values of 1.02 to 1.04.

References

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