Effect of illumination and gate bias on flat-band voltage in plasma CVD Si-N on n-Si MIS structure

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Effect of illumination and gate bias on flat-band voltage in plasma CVD Si-N on n-Si MIS structure

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Remarkable effects of light illumination and/or negative gate bias on the capacitance/voltage characteristics of plasma CVD Si-N on n-Si structure are described. A qualitative model which can explain consistently the experimental results is briefly discussed.

Inspec keywords: electronic conduction in insulating thin films; silicon compounds; photovoltaic effects; CVD coatings; metal-insulator-semiconductor structures

Other keywords: electronic conduction in insulating films; capacitance voltage characteristics; flat band voltage; negative gate bias; model; light illumination

Subjects: Electrical properties of insulators (thin films, low-dimensional and nanoscale structures); Photoconduction and photovoltaic effects; photodielectric effects; Electrical properties of metal-insulator-semiconductor structures; Metal-insulator-semiconductor structures

References

    1. 1)
      • Fujita, S., Hoi, W.L., Nishihara, M., Sasaki, A.: `Deep trap density and energy levels in Si', Proc. int. conf. on defects semicond., 1980, Oiso, (to be published).
    2. 2)
      • T. Ito , T. Nozaki , H. Arakawa , M. Shinoda . Thermally grown silicon nitride films for high-performance MIS devices. Appl. Phys. Lett. , 330 - 331
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Erratum: Effect of illumination and gate bias on flat-band voltage in plasma CVD Si-N on n-Si MIS structure