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Stability of aluminium-polysilicon photovoltaic junctions

Stability of aluminium-polysilicon photovoltaic junctions

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© The Institution of Electrical Engineers
Published

Aluminium p-type polysilicon contacts display a rectifying behaviour which exhibits an aging towards reduced Schottky barrier heights and increased n-values or ideality factors. The time scale for this aging process increases dramatically with the thickness of the aluminium layer in the range 100–1000 Å, and the overall behaviour is in accordance with the model of Ponpon and Siffert for transport of oxygen through the aluminium film to the polysilicon surface.

Inspec keywords: aluminium; photovoltaic effects; ageing; silicon; semiconductor technology; solar cells; semiconductor-metal boundaries; elemental semiconductors; Schottky-barrier diodes

Other keywords: rectifying behaviour; poly-Si solar cells; Al p-poly-Si contacts; photovoltaic junctions; O2 transport through Al film; ageing; stability

Subjects: Photoelectric conversion; solar cells and arrays; Electrical properties of metal-nonmetal contacts; Photoconduction and photovoltaic effects; photodielectric effects; Solar cells and arrays; Semiconductor-metal interfaces; Junction and barrier diodes; Semiconductor technology

References

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      • J.J. Ponpon , P. Siffert . Role of oxygen in the mechanism of formation of Schottky diodes. J. Appl. Phys. , 6004 - 6011
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      • J.K. Kleta , D.L. Pulerey . On the stability of MIS solar cells. IEEE Electron. Dev. Lett. , 107 - 109
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      • Thomson, D. J., and Card, H. C.: ‘Influence of surface treatment on rectification properties of aluminium-polysilicon contacts’, to be published.
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      • K.K. Ng , H.C. Card . Asymmetry in the SiO2 tunneling barriers to electrons and holes. J. Appl. Phys. , 2153 - 2157
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