Stability of aluminium-polysilicon photovoltaic junctions

Stability of aluminium-polysilicon photovoltaic junctions

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Aluminium p-type polysilicon contacts display a rectifying behaviour which exhibits an aging towards reduced Schottky barrier heights and increased n-values or ideality factors. The time scale for this aging process increases dramatically with the thickness of the aluminium layer in the range 100–1000 Å, and the overall behaviour is in accordance with the model of Ponpon and Siffert for transport of oxygen through the aluminium film to the polysilicon surface.


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