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High efficiency InP transferred electron device for high peak power, high mean power pulsed sources in J-band

High efficiency InP transferred electron device for high peak power, high mean power pulsed sources in J-band

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© The Institution of Electrical Engineers
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High efficiency indium transferred electron pulsed diodes have been shown to produce high peak powers simultaneously with moderately high mean power with DC to RF conversion efficiencies up to 22% at upper J-band frequencies. Devices have been combined in four-diode waveguide array circuits to produce powers of 40 W peak, 2 W mean simultaneously, and 64.5 W at lower duty cycle.

Inspec keywords: Gunn diodes; indium compounds; III-V semiconductors

Other keywords: III-V semiconductors; microwave; pulsed diodes; high peak power; J-band; high mean power; InP transferred electron device; four-diode waveguide array circuits; pulsed sources

Subjects: Solid-state microwave circuits and devices; Bulk effect devices; II-VI and III-V semiconductors

References

    1. 1)
      • Brookbanks, D.M., Myers, F.A.: `Cavity stabilised InP arrays', Proc. 6th Cornell Elect. Eng. Conf., 1977, p. 123.
    2. 2)
      • Gray, K.W., Patteson, J.E., Rees, H.D., Prew, B.A., Clarke, R.C., Irving, L.D.: `Current limiting contacts for InP transferred electron devices', Proc. 5th Cornell Elect. Eng. Conf., 1975, p. 215.
    3. 3)
      • D.M. Brookbanks . Effect of thermal impedance on chirp characteristics of high efficiency pulsed InP oscillators. Electron. Lett.
    4. 4)
      • Stevens, R., Tarrant, D., Myers, F.A.: `40 watt, 16 GHz pulsed Gunn diode oscillator', Proc. 4th EMC, 1974, p. 257.
    5. 5)
      • Smith, D.C., Tebbenham, R.L.: `Fast rise time InP oscillators employing cavity stabilisation and pulsed priming techniques', Proc. 9th EMC, 1979, p. 538.
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