Preparation of CuInS2 on GaP grown by LPE

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Preparation of CuInS2 on GaP grown by LPE

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The letter describes the use of LPE in the preparation of CuInS2 epitaxial layers. Both the tipping and sliding boat methods were adopted for the LPE growth, the latter being found more suitable.

Inspec keywords: gallium compounds; semiconductor epitaxial layers; semiconductor growth; p-n heterojunctions; liquid phase epitaxial growth; indium compounds; III-V semiconductors; copper compounds

Other keywords: tipping; sliding boat methods

Subjects: Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions; Deposition from liquid phases (melts and solutions); Epitaxial growth; Other semiconductor materials; Thin film growth, structure, and epitaxy; Semiconductor junctions

References

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      • Loferski, J.J.: `Tandem photovoltaic solar cells and increased solar energy conversion efficiency', 12th IEEE Photovoltaic Specialists Conf., 1976, Baton Rouge, Louisiana, p. 957–961.
    2. 2)
      • J.J. Loferski . Theoretical considerations governing the choice of the optimum semiconductor for photovoltaic solar energy conversion. J. Appl. Phys. , 777 - 784
    3. 3)
      • H.L. Hwang , B.H. Tseng , C.Y. Sun , J.J. Loferski . Growth and properties of CuInS2 epitaxial layers obtained by chemical vapour transport. Solar Energy Materials
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19810174
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