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High temperature CW operation of 1.5 μm InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers

High temperature CW operation of 1.5 μm InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers

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© The Institution of Electrical Engineers
Published

InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers are reported. The CW threshold current at 20°C was 70 mA. The maximum CW operating temperature of 70°C was achieved. The characteristic temperature under CW operation was 51 K. Operation in fundamental transverse mode and single longitudinal mode up to 1.9 and 1.4 times the threshold current, respectively, was obtained.

Inspec keywords: gallium arsenide; III-V semiconductors; indium compounds; semiconductor junction lasers

Other keywords: single longitudinal mode; transverse mode; planoconvex waveguide lasers; III-V semiconductors; CW threshold current; 1.5 micron; InGaAsP/InP

Subjects: Semiconductor lasers; Design of specific laser systems; Lasing action in semiconductors

References

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