© The Institution of Electrical Engineers
A photoconductivity study has been made of nominally undoped VPE n-InP materials grown on semi-insulating InP:Fe substrates. The photoresponse spectra obtained indicate features characteristic of Cr deep acceptors. By comparing the magnitudes of the photoresponse with that of a back-doped InP:Cr reference sample, the concentration has been estimated at between 2 and 8×1014 cm−3.
References
-
-
1)
-
B. Tuck ,
G.A. Adegboyega ,
P.R. Jay ,
M.J. Cardwell
.
Out diffusion of chromium from GaAs substrates.
Inst. Phys. Conf. Ser.
-
2)
-
A.M. White ,
P. Porteous ,
B. Day ,
P.J. Dean
.
Characteristics of deep traps in InP and GaAs revealed by photocapacitance spectroscopy.
Inst. Phys. Conf. Ser.
-
3)
-
Y.M. Houng ,
G.L. Pearson
.
Deep trapping effects at the GaAs-GaAs:Cr interface in GaAs FET structures.
J. Appl. Phys.
-
4)
-
D.J. Ashen ,
P.J. Dean ,
D.T.J. Hurle ,
J.B. Mullin ,
A. Royle ,
A.M. White
.
The incorporation of residual impurities in vapour grown GaAs.
Inst. Phys. Conf. Ser.
-
5)
-
H. Maroc ,
J.T. Andrews ,
S.B. Hyder
.
Substrate dependence of InP m.e.s.f.e.t. performance.
Electron. Lett.
-
6)
-
S. Fung ,
R.J. Nicholas
.
(1980)
Studies of Cr deep acceptor levels in InP.
-
7)
-
S.H. Chiao ,
A.G. Antypas
.
Photocapacitance effects of deep traps in n-type InP.
J. Appl. Phys.
-
8)
-
S. Fung ,
R.J. Nicholas ,
R.A. Stradling
.
A study of the deep acceptor levels of iron in InP.
J. Phys. C: Solid-State Phys.
-
9)
-
M.G. Alderstein
.
Electrical traps in GaAs microwave f.e.t.s.
Electron. Lett.
-
10)
-
O. Wada ,
A. Majerfeld ,
A.N.M.M. Choudhury
.
Interaction of deep-level traps with the lowest and upper conduction minima in InP.
J. Appl. Phys.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19810133
Related content
content/journals/10.1049/el_19810133
pub_keyword,iet_inspecKeyword,pub_concept
6
6