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Schottky-barrier coupled Schottky-barrier gate GaAs FET logic

Schottky-barrier coupled Schottky-barrier gate GaAs FET logic

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© The Institution of Electrical Engineers
Published

First accounts of the experimental details of Schottky-barrier gate GaAs FET logic circuits that use a Schottky barrier for interstage level shifting are described. Tpd and power consumption of an inverter in an 11-stage ring oscillator showed 120 ps and 12 mW, respectively, with FET gate dimensions of 3×50 μm2.

Inspec keywords: Schottky gate field effect transistors; III-V semiconductors; gallium arsenide; integrated logic circuits

Other keywords: invertor; Schottky barrier gate; ring oscillator; III-V semiconductors; GaAs FET logic circuits; interstage level shifting

Subjects: Logic circuits; II-VI and III-V semiconductors; Other field effect devices; Other field effect integrated circuits

References

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      • N. Hashizume , S. Kataoka , K. Tomizawa . Measurements of the electron accumulation on two Schottky diodes connected metal to metal. Electron. Lett. , 495 - 496
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      • N. Hashizume , S. Kataoka . Gunn-effect inhibitor and its application to high-speed carry finding device. IEEE Trans. , 183 - 190
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      • N. Hashizume , S. Kataoka , K. Tomizawa . Schottky-contact coupling between Schottky-electrode-triggered Gunn elements. IEEE Trans. , 1019 - 1026
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      • P.J.T. Mellor , A.W. Livingstone . Capacitor-coupled logic using GaAs depletion-mode f.e.t.s. Electron. Lett. , 749 - 750
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      • R.L. van Tuyl , C.A. Liechti , R.E. Lee , E. Gowen . GaAs MESFET logic with 4-GHz clock rate. IEEE J. Solid-State Circ. , 485 - 496
    6. 6)
      • Tamaki, Y., Tanimoto, M., Yanai, H.: `Study of Schottky-contact coupling in Gunn-effect logic circuits', Rec. Nat. Convention Inst. Electron. Commun. Eng., 1974, Japan, p. 453.
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