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A simple closed-form analytical expression of the threshold voltage for a narrow-width MOSFET is developed. The narrow-width model gives a threshold voltage expression as a function of gate oxide thickness, channel doping concentration, backgate bias and channel width. The theory is compared with experimental results and the agreement is close.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19810036
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