Ion beam oxidation of Nb-based Josephson junctions
Ion beam oxidation of Nb-based Josephson junctions
- Author(s): R. Herwig
- DOI: 10.1049/el:19800604
For access to this article, please select a purchase option:
Buy article PDF
Buy Knowledge Pack
IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.
Electronics Letters — Recommend this title to your library
Thank you
Your recommendation has been sent to your librarian.
- Author(s): R. Herwig 1
-
-
View affiliations
-
Affiliations:
1: Institut für Elektrotechnische Grundlagen der Informatik, Universität Karlsrühe, Karlsrühe, West Germany
-
Affiliations:
1: Institut für Elektrotechnische Grundlagen der Informatik, Universität Karlsrühe, Karlsrühe, West Germany
- Source:
Volume 16, Issue 22,
23 October 1980,
p.
850 – 851
DOI: 10.1049/el:19800604 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published
Ion beam oxidation and structuring of Nb-based planar Josephson junctions are briefly described and preliminary results are presented.
Inspec keywords: oxidation; superconducting junction devices; Josephson effect
Other keywords: Nb based Josephson junctions; ion beam oxidation
Subjects: Superconducting junction devices; Superconductor tunnelling phenomena, proximity effects, and Josephson effect
References
-
-
1)
- J.H. Greiner , C.J. Kircher . Fabrication process for Josephson integrated circuits. IBM J. Res. Develop. , 195 - 211
-
2)
- R.F. Broom , R.B. Laibowitz , Th.O. Mohr , W. Walter . Fabrication and properties of niobium Josephson tunnel junctions. IBM J. Res. Develop. , 212 - 222
-
3)
- W.H. Henkels , C.J. Kircher . Penetration depth measurement on type II superconductors. IEEE Trans. , 63 - 66
-
4)
- J.R. Sites . Semiconductor applications of thin films deposited by neutralized ion beam sputtering. Thin Solid Films , 47 - 53
-
5)
- W. Weinacht . Influence of film thickness on d.c. Josephson current. Phys. Stat. Sol. , K169 - K172
-
1)
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19800604
Related content
content/journals/10.1049/el_19800604
pub_keyword,iet_inspecKeyword,pub_concept
6
6
