Ion beam oxidation of Nb-based Josephson junctions
Ion beam oxidation of Nb-based Josephson junctions
- Author(s): R. Herwig
- DOI: 10.1049/el:19800604
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- Author(s): R. Herwig 1
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View affiliations
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Affiliations:
1: Institut für Elektrotechnische Grundlagen der Informatik, Universität Karlsrühe, Karlsrühe, West Germany
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Affiliations:
1: Institut für Elektrotechnische Grundlagen der Informatik, Universität Karlsrühe, Karlsrühe, West Germany
- Source:
Volume 16, Issue 22,
23 October 1980,
p.
850 – 851
DOI: 10.1049/el:19800604 , Print ISSN 0013-5194, Online ISSN 1350-911X
© The Institution of Electrical Engineers
Published
Ion beam oxidation and structuring of Nb-based planar Josephson junctions are briefly described and preliminary results are presented.
Inspec keywords: oxidation; superconducting junction devices; Josephson effect
Other keywords: Nb based Josephson junctions; ion beam oxidation
Subjects: Superconducting junction devices; Superconductor tunnelling phenomena, proximity effects, and Josephson effect
References
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1)
- J.H. Greiner , C.J. Kircher . Fabrication process for Josephson integrated circuits. IBM J. Res. Develop. , 195 - 211
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2)
- R.F. Broom , R.B. Laibowitz , Th.O. Mohr , W. Walter . Fabrication and properties of niobium Josephson tunnel junctions. IBM J. Res. Develop. , 212 - 222
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- W.H. Henkels , C.J. Kircher . Penetration depth measurement on type II superconductors. IEEE Trans. , 63 - 66
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4)
- J.R. Sites . Semiconductor applications of thin films deposited by neutralized ion beam sputtering. Thin Solid Films , 47 - 53
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5)
- W. Weinacht . Influence of film thickness on d.c. Josephson current. Phys. Stat. Sol. , K169 - K172
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1)
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