Alloying behaviour of Au-Ge/Pt ohmic contacts to GaAs by pulsed electron beam and furnace heating

Access Full Text

Alloying behaviour of Au-Ge/Pt ohmic contacts to GaAs by pulsed electron beam and furnace heating

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

Au-Ge/Pt contacts on n-type GaAs have been irradiated by a pulsed electron beam to yield excellent ohmic behaviour. Auger electron spectroscopy (a.e.s.) measurements of the depth profiles of the constituent elements in these irradiated contacts indicate that considerable intermixing of the metals with Ga and/or As is not necessary for good ohmic behaviour. Subsequent isochronal (2 min) furnace heating in H2 of these contacts at different temperatures shows that the Au-Ge/Pt metallisation system is highly reactive, with the inter mixing and the ohmic behaviour being a strong function of the furnace temperature. From a.e.s. measurements the important role of Ge as a dopant in generating a heavily doped GaAs layer at the metal-GaAs interface responsible for the ohmic character of the contacts is confirmed. Low specific contact resistance is closely related to the ability in incorporating Ge in a shallow GaAs layer during the alloy cycle.

Inspec keywords: Auger effect; gold alloys; gallium arsenide; III-V semiconductors; germanium alloys; electron beam applications; platinum alloys; ohmic contacts

Other keywords: pulsed electron beam; furnace heating; depth profiles; alloying behaviour; GaAs; H2; Au-Ge/Pt ohmic contacts; AES

Subjects: Semiconductor-metal interfaces; Electrical properties of metal-nonmetal contacts; II-VI and III-V semiconductors

References

    1. 1)
      • Tandon, J.L., Kirkpatrick, C.G., Welch, B.M., Fleming, P.: `Pulsed electron beam alloying of Au-Ge/Pt ohmic contacts to GaAs', AIP Proceedings on laser and electron beam processing of materials, 1979.
    2. 2)
      • J.M. Shannon . Appl. Phys. Lett.. Appl. Phys. Lett.
    3. 3)
      • H.H. Berger . Contact resistance and contact resistivity. J. Electrochem. Soc.
    4. 4)
      • V.L. Rideout . A review of the theory and technology for ohmic contacts to group III–V compound semiconductors. Solid-State Electron.
    5. 5)
      • R.H. Stolen , V. Ramaswamy , P. Kaiser , W. Pleibel . Appl. Phys. Lett.. Appl. Phys. Lett.
    6. 6)
      • Eckhardt, G., Anderson, C.L., Hess, L.D., Krumm, C.F.: `Laser-annealed ohmic contacts for GaAs microwave devices', AIP Conf. Proc., 1979, 50, p. 641.
    7. 7)
      • C.-Y. Ting , C.Y. Chen . A study of the contacts of a diffused resistor. Solid-State Electron.
    8. 8)
      • S. Margalit , D. Pekote , D.M. Pepper , C.P. Lee , A. Yariv . Q-switched ruby laser alloying of ohmic contacts on GaAs epilayers. Appl. Phys. Lett.
    9. 9)
      • M. Wittmer , T. Finstad , M.-A. Nicolet . Investigation of the Au-Ge-Ni and Au-Ge-Pt system used for alloyed contacts to GaAs. J. Vac. Sci. Tech.
    10. 10)
      • G. Badertscher , R.P. Salathe , W. Luthy . Ohmic contacts on n-GaAs produced by laser alloying of Ge films. Electron. Lett.
    11. 11)
      • M. Ogawa . Alloying behaviour of Ni/Au-Ge films on GaAs. J. Appl. Phys.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19800603
Loading

Related content

content/journals/10.1049/el_19800603
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading