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Dual wavelength surface emitting InGaAsP l.e.d.s

Dual wavelength surface emitting InGaAsP l.e.d.s

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© The Institution of Electrical Engineers
Published

Surface emitting l.e.d.s capable of simultaneous emission near 1.14 μm and 1.3 μm wavelengths, from an area 75 μm × 75 μm. have been fabricated and tested. Outputs of 0.5 mW and 0.8 mW, respectively, were obtained at the two wavelengths in initial devices driven at 50 mA d c. The measured crosstalk was −23.9 dB (electrical).

Inspec keywords: light emitting diodes; III-V semiconductors; indium compounds; gallium arsenide

Other keywords: 1.14 micron wavelength; 1.3 micron wavelength; III-V semiconductor; crosstalk; surface emitting InGaAsP LEDs

Subjects: Light emitting diodes; II-VI and III-V semiconductors

References

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      • B. Owen , K. Ogawa , T.P. Lee , C.A. Burrus . (1980) , A prototype 1.3 μm wavelength InGaAsP-PIN/GaAs-FET receiver module.
    2. 2)
      • J.C. Campbell , T.P. Lee , A.G. Dentai , C.A. Burrus . Dual-wavelength demultiplexing InGaAsP photodiode. Appl. Phys. Lett. , 401 - 402
    3. 3)
      • A.G. Dentai , T.P. Lee , C.A. Burrus , E. Buehler . Small-area high-radiance c.w. InGaAsP l.e.d.s. emitting at 1.2 to 1.3 μ. Electron. Lett. , 484 - 485
    4. 4)
      • T.P. Lee , J.C. Campbell , K. Ogawa , A.R. McCormick , A.G. Dentai , C.A. Burrus . Dual-channel 1.5 Mb/s lightwave receiver employing an InGaAsP wavelength-demultiplexing detector. Electron. Lett. , 388 - 389
    5. 5)
      • J.C. Campbell , A.G. Dentai , T.P. Lee , C.A. Burrus . Improved two-wavelength demultiplexing InGaAsP photodetector. IEEE J. Quantum Electron. , 601 - 602
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