Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Optimisation of p+ doping level of n+-p-p+ bifacial b.s.f. solar cells by ion implantation

Optimisation of p+ doping level of n+-p-p+ bifacial b.s.f. solar cells by ion implantation

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electrical Engineers
Published

High-low junctions of n+-p-p+ bifacial back surface field solar cells have been fabricated by B11+ implantation. After an isothermal annealing step at 900°C for 10 min, an optimum surface concentration of 5 × 1019 cm−3 is observed. Its origin is found to lie in the partial electrical activation of the implanted impurities.

Inspec keywords: solar cells; annealing; optimisation; semiconductor doping; ion implantation

Other keywords: isothermal annealing; surface concentration; doping level; ion implantation; optimisation; bifacial back surface field solar cells; electrical activation

Subjects: Doping and implantation of impurities; Solar cells and arrays; Other heat and thermomechanical treatments; Semiconductor doping; Photoelectric conversion; solar cells and arrays

References

    1. 1)
      • H.P.D. Lanyon , R.A. Tuft . Bandgap narrowing in moderately to heavily doped silicon. IEEE Trans. , 1014 - 1017
    2. 2)
      • C.T. Sah , F.A. Lindholm , J.G. Fossum . A high-low junction emitter structure for improving silicon solar cell efficiency. IEEE Trans. , 66 - 67
    3. 3)
      • J.C. Plunkett , J.L. Stove , A. Leu . A computer algorithm for accurate and repeatable profile analysis using anodization and stripping of silicon. Solid-State Electron. , 447 - 453
    4. 4)
      • J. del Alamo , J. van Meerbergen , F. D'Hoore , J. Nijs . , High-low junctions for solar cell applications.
    5. 5)
      • W.S. Johnson , J.F. Gibbons . (1969) , Projected range statistics.
    6. 6)
      • Ryssel, H., Hoffman, K., Maberger, K., Prinke, G., Muller, K.: `High concentration effects of ion implanted boron in silicon', Extended abstracts of Spring meeting of Electrochemical Society, 1980, St. Louis, p. 378–379.
    7. 7)
      • A. Luque , A. Cuevas , J. Eguren . Solar cell behaviour under variable surface recombination velocity and proposal of a novel structure. Solid-State Electron. , 793 - 794
    8. 8)
      • von Roos, O., Anspaugh, B.: `The front surface field solar cell, a new concept', Conference Record of the 13th IEEE photovoltaic specialists conference, 1978, Washington, DC, p. 1119–1120.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19800439
Loading

Related content

content/journals/10.1049/el_19800439
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address