Optimisation of p+ doping level of n+-p-p+ bifacial b.s.f. solar cells by ion implantation

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Optimisation of p+ doping level of n+-p-p+ bifacial b.s.f. solar cells by ion implantation

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© The Institution of Electrical Engineers
Published

High-low junctions of n+-p-p+ bifacial back surface field solar cells have been fabricated by B11+ implantation. After an isothermal annealing step at 900°C for 10 min, an optimum surface concentration of 5 × 1019 cm−3 is observed. Its origin is found to lie in the partial electrical activation of the implanted impurities.

Inspec keywords: solar cells; annealing; optimisation; semiconductor doping; ion implantation

Other keywords: isothermal annealing; surface concentration; doping level; ion implantation; optimisation; bifacial back surface field solar cells; electrical activation

Subjects: Doping and implantation of impurities; Solar cells and arrays; Other heat and thermomechanical treatments; Semiconductor doping; Photoelectric conversion; solar cells and arrays

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