Low temperature thermal annealing of arsenic implanted silicon
Low temperature thermal annealing of arsenic implanted silicon
- Author(s): P.D. Scovell and J.M. Young
- DOI: 10.1049/el:19800426
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- Author(s): P.D. Scovell 1 and J.M. Young 1
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View affiliations
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Affiliations:
1: Standard Telecommunication Laboratories Limited, Harlow, UK
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Affiliations:
1: Standard Telecommunication Laboratories Limited, Harlow, UK
- Source:
Volume 16, Issue 16,
31 July 1980,
p.
614 – 615
DOI: 10.1049/el:19800426 , Print ISSN 0013-5194, Online ISSN 1350-911X
The annealing of heavily arsenic implanted (100) silicon using low temperature furnace techniques to obtain metastable concentrations of the dopant is described and the activations obtained are compared with those found after laser and electron beam annealing.
Inspec keywords: annealing; ion implantation; elemental semiconductors; arsenic; electrical conductivity of crystalline semiconductors and insulators; semiconductor doping; silicon
Other keywords:
Subjects: Cold working, work hardening; post-deformation annealing, recovery and recrystallisation; textures; Semiconductor doping; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Elemental semiconductors; Doping and implantation of impurities; Electrical conductivity of elemental semiconductors
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