Redistribution of chromium in semi-insulating GaAs:Cr during laser annealing

Redistribution of chromium in semi-insulating GaAs:Cr during laser annealing

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Secondary ion mass spectrometry (s.i.m.s.) measurements on laser irradiated Cr-doped (semi-insulating) GaAs samples revealed a Cr redistribution effect near the surface region. The maximum depth at which redistribution is measured is shown to increase with increasing energy density from a Q-switched ruby laser, reaching a depth of ~1.4 μm for an energy density of 1.4 J/cm2. The redistribution is explained in terms of a zone refining process which occurs during the cooling cycle of the laser induced melted region.


    1. 1)
      • Ferris, S.D., Leamy, H.J.: `Laser-solid interactions and laser processing—1978', AIP Conf. Proc., 1979, American Institute of Physics, 50.
    2. 2)
      • C.W. White , P.S. Peercy . , Laser and electron beam processing of materials—1979.
    3. 3)
      • Tuck, B., Adegboyega, G.A., Jay, P.R., Cardwell, M.J.: `Out-diffusion of chromium from GaAs substrates', Inst. Phys. Conf. Ser., 1979, 45, p. 114.
    4. 4)
      • A.M. Huber , G. Morillot , N.T. Linh , P.N. Favennec , B. Deveaud , B. Toulouse . Chromium profiles in semi-insulating GaAs after annealing with a Si3N4 encapsulant. Appl. Phys. Lett.
    5. 5)
      • C.A. Evans , V.R. Deline , T.W. Sigmon , A. Lidow . Redistribution of Cr during annealing of 80Se-implanted GaAs. Appl. Phys. Lett.
    6. 6)
      • P.N. Favennec , H. L'Haridon . Implantation of shallow impurities in Cr-doped semi-insulatimg GaAs. Appl. Phys. Lett.
    7. 7)
      • J.B. Clegg . Quantitative measurement of impurities in GaAs layers by secondary ion mass spectrometry. Surface & Interface Analysis
    8. 8)
      • M.H. Badawi , B.J. Sealy , K.G. Stephens . Vaporisation of GaAs during laser annealing. Electron. Lett.
    9. 9)
      • D.H. Auston , J.A. Golovchenko , A.L. Simons , R.E. Slusher , P.R. Smith , C.M. Surko , T.N.C. Venkatesan . Dynamics of laser annealing. AIP Conf. Proc.
    10. 10)
      • Haisty, R.W., Cronin, G.R.: `A comparison of doping effects of transition elements in GaAs', Physics of Semiconductors, Proceedings of the 7th Int. Conf., 1964, Academic Press, , p. 1161.
    11. 11)
      • B.R. Pamplin . (1975) , Crystal growth.
    12. 12)
      • J.C. Wang , R.F. Wood , C.W. White , B.R. Appleton , P.P. Pronko , S.R. Wilson , W.H. Christie . Dopant profile changes induced by laser irradiation of Si: comparison of theory and experiment. AIP Conf. Proc.

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