Controlling deep transient depletion of an m.o.s. capacitor

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Controlling deep transient depletion of an m.o.s. capacitor

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© The Institution of Electrical Engineers
Published

The transient surface potential Ψs of an m.o.s. capacitor is regulated to a given value Ψ0 by controlling the gate voltage. Simultaneously, the oxide voltage drop, depletion layer charge and generation current are measured. We present an application of this circuit to the determination of the deep doping profile in a silicon substrate.

Inspec keywords: metal-insulator-semiconductor structures; surface potential; doping profiles

Other keywords: MOS capacitor; Si substrate; gate voltage; depletion layer charge; doping profile; transient surface potential; oxide voltage drop

Subjects: Semiconductor doping; Metal-insulator-semiconductor structures

References

    1. 1)
      • W. van Gelder , E.H. Nicollian . Silicon impurity distribution as revealed by pulsed MOS C-V measurements. J. Electrochem. Soc. , 138 - 141
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19800261
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