Shallow trap spectroscopy in InP:Fe
Shallow trap spectroscopy in InP:Fe
- Author(s): J. Bonnafe ; M. Castagne ; J. Romestan ; M. de Murcia ; J.P. Fillard
- DOI: 10.1049/el:19800225
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- Author(s): J. Bonnafe 1 ; M. Castagne 1 ; J. Romestan 1 ; M. de Murcia 1 ; J.P. Fillard 1
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View affiliations
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Affiliations:
1: Laboratoire de Physique des Solides III, CEES-USTL, Montpellier, France
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Affiliations:
1: Laboratoire de Physique des Solides III, CEES-USTL, Montpellier, France
- Source:
Volume 16, Issue 9,
24 April 1980,
p.
313 – 315
DOI: 10.1049/el:19800225 , Print ISSN 0013-5194, Online ISSN 1350-911X
Shallow traps in the range 10–500 meV are investigated on InP:Fe semi-insulating material. It is shown that some 12 major contributions can be selected; all are related to a monomolecular recombination kinetic implying that recombination takes place through numerous centres. Comparison is made for the deeper traps with d.l.t.s. results.
Inspec keywords: III-V semiconductors; photoconductivity; thermally stimulated currents; electron traps; indium compounds; iron
Other keywords:
Subjects: Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Electrical conductivity of II-VI and III-V semiconductors; II-VI and III-V semiconductors; Photoconduction and photovoltaic effects; photodielectric effects; Photoconducting materials and properties; Impurity and defect levels in tetrahedrally bonded nonmetals
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