Characterisation of multiple-scan electron beam annealing method

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Characterisation of multiple-scan electron beam annealing method

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© The Institution of Electrical Engineers
Published

Beam power per unit area and exposure time are the predominant factors in defining implant anneal conditions for the multiple scan electron beam annealing technique. A theoretical analysis is presented which agrees with experimental results. Carrier concentration profiles confirm that the implant becomes electrically active without diffusion.

Inspec keywords: electron beam applications; semiconductor technology; ion implantation; annealing

Other keywords: beam power per unit area; multiple scan electron beam anneal technique; implant anneal conditions; exposure time; ion implanted semiconductor annealing; experimental results; theoretical analysis

Subjects: Semiconductor doping; Surface treatment (semiconductor technology)

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