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Cadmium telluride/Langmuir film photovoltaic structures

Cadmium telluride/Langmuir film photovoltaic structures

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© The Institution of Electrical Engineers
Published

The electrical properties of Schottky-barrier and Langmuir-film m.i.s. solar cells fabricated on chemically etched CdTe substrates are reported. The Schottky-barrier devices possess ideality factors close to unity and barrier heights of approximately 0.70 eV. Incorporation of one monolayer of a cadmium stearate Langmuir film between the metal electrode and the semiconductor is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions.

Inspec keywords: Schottky-barrier diodes; II-VI semiconductors; metal-insulator-semiconductor devices; solar cells; Langmuir films; metal-insulator-semiconductor structures

Other keywords: electrical properties; MIS solar cells; open circuit voltage; Schottky barrier solar cells; CdTe/Langmuir film photovoltaic structures; ideality factors

Subjects: Solar cells and arrays; Metal-insulator-semiconductor structures; Other field effect devices; Photoconduction and photovoltaic effects; photodielectric effects; Photoelectric conversion; solar cells and arrays; Photoelectric devices; Electrical properties of metal-insulator-semiconductor structures; II-VI and III-V semiconductors; Junction and barrier diodes

References

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