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Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

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© The Institution of Electrical Engineers
Published

The effect on threshold current density Jth of the use of an air-lock sample-exchange mechanism, substrate preparation and Al source purity was investigated for GaAs-Al0.27 Ga0.73 As double-heterostructure lasers grown by molecular-beam epitaxy (m.b.e.). The conditions necessary to prepare m.b.e. wafers that give Jth as low as for wafers prepared by liquid-phase epitaxy (Jth ≈ 1 × 103 A/cm2 for an active layer thickness of 0.1 μm) are summarised.

Inspec keywords: III-V semiconductors; gallium arsenide; semiconductor growth; semiconductor junction lasers; semiconductor epitaxial layers; molecular beam epitaxial growth

Other keywords: air lock sample exchange mechanism; threshold current density; GaAs-Al0.27Ga0.73As; MBE; molecular beam epitaxy; double heterostructure lasers

Subjects: Vacuum deposition; Crystal growth from vapour; Epitaxial growth; Lasing action in semiconductors; Semiconductor lasers

References

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