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Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy

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The effect on threshold current density Jth of the use of an air-lock sample-exchange mechanism, substrate preparation and Al source purity was investigated for GaAs-Al0.27 Ga0.73 As double-heterostructure lasers grown by molecular-beam epitaxy (m.b.e.). The conditions necessary to prepare m.b.e. wafers that give Jth as low as for wafers prepared by liquid-phase epitaxy (Jth ≈ 1 × 103 A/cm2 for an active layer thickness of 0.1 μm) are summarised.

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