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Pulsed electron-beam annealing of phosphorus-implanted silicon

Pulsed electron-beam annealing of phosphorus-implanted silicon

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Electrical properties of phosphorus-implanted silicon annealed by a single shot of a high-power pulsed electron beam have been studied by differential Hall-effect and sheet-resistivity measurements. Nearly 100% electrical activation of implanted phosphorus can be obtained after electron-beam annealing at an incident energy density of 0.92 J/cm2. Uniformly distributed carrier concentration profiles have been formed by electron-beam annealing.

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