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Effectiveness of charged vacancies in diffusion of implanted boron in silicon

Effectiveness of charged vacancies in diffusion of implanted boron in silicon

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A method is proposed to obtain the temperature dependence of the index of effectiveness of charged vacancies relative to neutral ones in boron diffusion in silicon from an implanted source. The temperature dependence compares favourably with some theoretical results and enables the inclusion of third order-effects in processing simulation programs.

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