Synthesis and analysis of d.l.t.s. spectra from m.o.s. surface states

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Synthesis and analysis of d.l.t.s. spectra from m.o.s. surface states

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Given Nss and σss as functions of energy and temperature, a procedure is developed to synthesise d.l.t.s spectra under arbitrary experimental conditions. Methods of analysis are then considered to determine Nss and σss from capture experiments.

Inspec keywords: metal-insulator-semiconductor structures; deep levels; surface electron states

Other keywords: capture experiments; MOS surface states; DLTS; deep level transient spectroscopy

Subjects: Electrical properties of metal-insulator-semiconductor structures; Impurity and defect levels; Electronic states (surfaces and interfaces); Metal-insulator-semiconductor structures

References

    1. 1)
      • E. Klausmann . , The evaluation of transient capacitance measure ments on MOS interfaces.
    2. 2)
      • N.M. Johnson , D.J. Bartelink , M. Schulz , S.T. Pantelides . (1978) , The physics of SiO.
    3. 3)
      • M. Schulz , N.M. Johnson . Evidence for multiphonon emission from interface states in MOS structures. Solid-State Commun. , 481 - 484
    4. 4)
      • S.D. Brotherton , J. Bicknell . The electron capture cross section and energy level of the gold acceptor centre in silicon. J. Appl. Phys. , 667 - 671
    5. 5)
      • R.D. Present . (1958) , Kinetic theory of gases.
    6. 6)
      • M. Schulz , N.M. Johnson . Transient capacitance measure ments of hole emission from interface states in MOS structures. Appl. Phys. Lett. , 622 - 625
    7. 7)
      • M. Schulz , E. Klausmann . Transient capacitance measure ments of interface states on the intentionally contaminated Si-SiO2 interface. Appl. Phys. , 169 - 175
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