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Novel microwave GaAs field-effect transistors

Novel microwave GaAs field-effect transistors

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A technology is described for the fabrication of Schottky-barrier f.e.t.s with electrodes on either or both sides of a submicrometre thick single-crystal layer of GaAs. Preliminary d.c. and microwave results are given together with possible advantages of these novel f.e.t. structures.

Inspec keywords: Schottky gate field effect transistors; solid-state microwave devices

Other keywords: solid state microwave devices; GaAs MESFET

Subjects: Solid-state microwave circuits and devices; Other field effect devices

References

    1. 1)
      • R.J.M. Griffiths , I.D. Blenkinsop , D.R. Wight . The preparation and properties of GaAs layers for novel f.e.t. structures. Electron. Lett.
    2. 2)
      • W. Shockley . A unipolar ‘field-effect’ transistor. Proc. IRE , 1365 - 1376
    3. 3)
      • Vokes, J.C., Barr, W.P., Dawsey, J.R., Hughes, B.T., Shrubb, S.J.W.: `A low noise FET amplifier in coplanar waveguide', International microwave symposium digest, 1977, San Diego.
    4. 4)
      • R.A. Warriner . Computer simulation of gallium-arsenide field effect transistors using Monte Carlo methods. IEE J. Solid-State & Electron Devices , 105 - 110
    5. 5)
      • Brewitt-Taylor, C.R., Robson, P.N., Sitch, J.E.: `Computer modelling of GaAs FETs', Proceedings 8th European microwave conference, 1978, Paris, p. 415–419.
    6. 6)
      • G.A. Antypas , J. Edgecumbe . Glass-sealed GaAs-GaAlAs transmission photocathode. Appl. Phys. Lett. , 371 - 372
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