Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Effects of ion implantation on deep levels in GaAs

Effects of ion implantation on deep levels in GaAs

For access to this article, please select a purchase option:

Buy article PDF
$19.95
(plus tax if applicable)
Buy Knowledge Pack
10 articles for $120.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

We have studied the effects of ion implantation in GaAs using the techniques of deep-level transient spectroscopy. Samples included an unimplanted epitaxial buffer layer, a sample implanted directly into that buffer layer and then capped with Si3N4, a sample implanted into that buffer layer through a similar cap, and a sample implanted directly into a semi-insulating substrate and then capped. All implants were with Si29 and both types of implant were annealed at 860°C for fifteen minutes. We find that the total density of deep levels is not changed significantly by direct implantation, capping and annealing but that implantation through a cap greatly in creases the total deep-level concentration. Deep levels found in implanted layers after capping and annealing are primarily characteristic of the substrate or buffer layer into which the implantation is made, unless the implant is through a cap in which case contaminants from the capping process may be evident at high densities.

References

    1. 1)
      • A. Mitonneau , G.M. Martin , A. Mircea . Hole traps in bulk and epitaxial GaAs crystals. Electron. Lett. , 666 - 668
    2. 2)
      • G.M. Martin , A. Mitonneau , A. Mircea . Electron traps in bulk and epitaxial GaAs crystals. Electron. Lett. , 191 - 193
    3. 3)
      • Mitonneau, A., Martin, G.M., Mircea, A.: `Investigation of minority deep levels by a new optical method', 73, Proceedings of the 6th international symposium on GaAs and related compounds, 1976, Edinburgh, Conference publication, Institute of Physics, p. 191–193.
    4. 4)
      • T.R. Jervis . Confirmation of the effect of field-dependent scattering centers on electron mobility in GaAs. J. Appl. Phys.
    5. 5)
      • Y.M. Houng , G.L. Pearson . Deep trapping effects at the GaAs-GaAs:Cr interface in GaAs FET structures. J. Appl. Phys.
    6. 6)
      • D.V. Lang , R.A. Logan . A study of deep levels in GaAs by capacitance transients. J. Elect. Mater.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19790442
Loading

Related content

content/journals/10.1049/el_19790442
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address