Direct modulation characteristics of GaInAsP/InP d.h. lasers with various stripe widths measured by sharp-pulse method

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Direct modulation characteristics of GaInAsP/InP d.h. lasers with various stripe widths measured by sharp-pulse method

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© The Institution of Electrical Engineers
Published

The direct modulation characteristics of GaInAsP/InP d.h. lasers emitting at 1.3 μm with various stripe widths were measured by the proposed sharp-pulse method. As a result, a flat modulation frequency response up to 1.9 GHz was observed in a laser diode with 5 μm stripe width.

Inspec keywords: semiconductor junction lasers; optical modulation; optical communication equipment; III-V semiconductors; indium compounds; gallium arsenide; laser beams

Other keywords: low loss optical fibre communication system; laser diode; sharp pulse method; frequency response; GaInAsP/InP DH; modulation characteristics; stripe widths

Subjects: Design of specific laser systems; Lasing action in semiconductors; Semiconductor lasers; Laser beam modulation, pulsing and switching; mode locking and tuning

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