Properties of Se-Ge inorganic photoresist as an ion-implantation mask

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Properties of Se-Ge inorganic photoresist as an ion-implantation mask

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© The Institution of Electrical Engineers
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The usefulness of Se-Ge inorganic photoresists as ion-implantation masks is described. Experimentally determined values of the projected range and range straggling are in agreement with theory. The required masking thickness is shown to be about ⅓ of that of organic photoresist. Other advantageous features are also pointed out.

Inspec keywords: ion implantation; photoresists; masks

Other keywords: IV-VI semiconductors; Se-Ge inorganic photoresist; ion implantation masks

Subjects: Semiconductor doping; Lithography (semiconductor technology)

References

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      • P.J. Webber , J.A. Savage . Some physical properties of Ge-As-Se infrared optical glasses. J. Non-Cryst. Solids , 271 - 283
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      • H. Nagai , A. Yoshikawa , Y. Toyoshima , O. Ochi , Y. Mizushima . New application of Se-Ge glasses to silicon microfabrication technology. Appl. Phys. Lett. , 145 - 147
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      • G. Baccarani , K.A. Pickar . Range and atraggle of boron in photoresist. Solid-State Electron. , 239 - 243
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      • A. Yoshikawa , O. Ochi , H. Nagai , Y. Mizushima . A novel inorganic photoresist utilizing Ag photodoping in Se-Ge glass films. Appl. Phys. Lett. , 677 - 679
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      • J. Lindhard , M. Scharff , H.E. Schiott . Range concepts and heavy ion ranges (Notes on atomic collisions, II). Mat. Fys. Medd. Dan. Vid. Selsk. , 1 - 42
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      • J.F. Gibbons , W.S. Johnson , S.W. Mylroie . (1975) , Projected range statisties.
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      • R. Wolfe . (1975) , Applied solid state science.
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