Effect of Si3N4 encapsulation on the laser-annealing behaviour of GaAs

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Effect of Si3N4 encapsulation on the laser-annealing behaviour of GaAs

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When semi-insulating GaAs samples are coated with pyrolytically deposited Si3N4 layers and subsequently irradiated with a Q-switched ruby laser with energy densities > 0.3 J/cm2, it is found that a thin layer (0.1–0.25 μm) of the underlying GaAs substrates becomes n-type. This phenomenon may be the reason why, in previous work on laser annealing of donor implanted GaAs samples, the percentage electrical activity increased when samples were coated with Si3N4.

Inspec keywords: annealing; encapsulation; gallium arsenide; semiconductor doping; III-V semiconductors; laser beam applications

Other keywords: energy densities >0.3 J/cm2; semiinsulating GaAs samples; laser annealing behaviour of GaAs; Si3N4 encapsulating effect; pyrolytically deposited Si3N4 layers; GaAs substrate surface becomes n-type; Q-switched ruby laser; electrical activity increase

Subjects: Doping and implantation of impurities; Radiation damage and other irradiation effects; Laser applications; Laser beam interactions and properties; Semiconductor doping; Laser-surface impact phenomena; II-VI and III-V semiconductors; Surface treatment and degradation in semiconductor technology

References

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      • Woodcock, J.M., Butler, H.: `Highly doped implanted layer annealed GaAs', Proceedings of the ion beam modification of materials conference, 1978, Budapest.
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      • B.J. Sealy , S.S. Kular , K.G. Stephens , R. Croft , A. Palmer . Electrical properties of laser-annealed donor-implanted GaAs. Electron. Lett. , 720 - 721
    3. 3)
      • B.J. Sealy , M.H. Badawi , S.S. Kular , K.G. Stephens . Laser annealing of ion implanted GaAs. Electron. Lett.
    4. 4)
      • S.S. Kular , B.J. Sealy , M.H. Badawi , K.G. Stephens , D. Sadana , G.R. Booker . Laser annealing of capped and uncapped GaAs. Electron. Lett. , 413 - 414
    5. 5)
      • Tandon, J.L., Eisen, F.H.: `Pulsed annealing of implanted semi-insulating GaAs', AIP Conf. Proc. 50, Proceedings of laser-solid interactions and laser processing conference, 1978, Boston, p. 616.
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