Laser annealing of capped and uncapped GaAs
Laser annealing of capped and uncapped GaAs
- Author(s): S.S. Kular ; B.J. Sealy ; M.H. Badawi ; K.G. Stephens ; D. Sadana ; G.R. Booker
- DOI: 10.1049/el:19790296
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- Author(s): S.S. Kular 1 ; B.J. Sealy 1 ; M.H. Badawi 1 ; K.G. Stephens 1 ; D. Sadana 2 ; G.R. Booker 2
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View affiliations
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Affiliations:
1: Department of Electronic & Electrical Engineering, University of Surrey, Guildford, UK
2: Department of Metallurgy & Science of Materials, Oxford University, Oxford, UK
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Affiliations:
1: Department of Electronic & Electrical Engineering, University of Surrey, Guildford, UK
- Source:
Volume 15, Issue 14,
5 July 1979,
p.
413 – 414
DOI: 10.1049/el:19790296 , Print ISSN 0013-5194, Online ISSN 1350-911X
Ion-implanted GaAs samples have been annealed using a Q-switched ruby laser. Both Si3N4 capped and uncapped samples decomposed and gallium precipitates were formed at the surface. The gallium could be removed by dissolution in HCl to leave high-quality GaAs.
Inspec keywords: ceramics; III-V semiconductors; silicon compounds; annealing; transmission electron microscope examination of materials; laser beam effects; gallium arsenide; etching; particle backscattering; precipitation
Other keywords:
Subjects: Precipitation and segregation; Semiconductor doping; Laser applications; II-VI and III-V semiconductors; Electrical and magnetic properties (related to treatment conditions); Other heat and thermomechanical treatments; Etch pits, decoration, transmission electron-microscopy and other direct observations of dislocations
References
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1)
- Sealy, B.J., Surridge, R.K., Kular, S.S., Stephens, K.G.: `Pulse annealing of ion implanted GaAs', Institute of Physics conference series 46, defects and radiation effects in semiconductors, September 1978, Nice, to be published.
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2)
- Sealy, B.J., Badawi, M.H., Kular, S.S., Stephens, K.G.: `Laser annealing of ion implanted GaAs', Proceedings of the symposium on laser-solid interactions and laser processing, November 1978, Boston, to be published.
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3)
- P.A. Barnes , H.J. Leamy , J.M. Poate , S.D. Ferris , J.S. Williams , G.K. Celler . Ohmic contacts produced by laser annealing Te implanted GaAs. Appl. Phys. Lett.
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4)
- B.J. Sealy , S.S. Kular , K.G. Stephens , R. Croft , A. Palmer . Electrical properties of laser-annealed donor-implanted GaAs. Electron. Lett. , 720 - 721
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5)
- Sealy, B.J., Kular, S.S., Stephens, K.G., Sadana, D., Booker, G.R.: `Laser annealing of ion implanted GaAs', International conference on ion beam modification of materials, Septmeber 1978, Budapest.
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1)
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