Charge storage in s.a.w. memory correlators

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Charge storage in s.a.w. memory correlators

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© The Institution of Electrical Engineers
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A general formula, that takes into account the recombination of the minority carriers in the neutral region, is given for the stored charge in a p+-n s.a.w. memory correlator operated in the parametric mode.

Inspec keywords: semiconductor diodes; surface acoustic wave devices; semiconductor device models; correlators

Other keywords: parametric mode; charge storage; minority carriers recombination; p+-n SAW memory correlators; neutral regions

Subjects: Signal processing and detection; Semiconductor device modelling, equivalent circuits, design and testing; Acoustical measurements and instrumentation; Acoustic wave devices; Junction and barrier diodes

References

    1. 1)
      • Gautier, H., Maerfeld, C., Tournois, P.: `Recent advances in diode acoustic correlators', Proceedings of the IEEE SU symposium, p. 478–483.
    2. 2)
      • Ingebrigtsen, K.A., Ronnekleiv, , Stueflotten, S.: `Experiments and analysis of acoustoelectric memory correlators', Proceedings AGARD, October 1977, p. 3–6.
    3. 3)
      • Borden, P.G.: `The storage correlator: theory and signal processing applications', 2800, GL Report, April 1978.
    4. 4)
      • Borden, P.G., Kino, G.S.: `An analytic theory for the storage correlator', Proceedings of the IEEE SU symposium, 1977, p. 485–491.
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