The parameter of a single hole trap frequently observed in bulk and v.p.e. n-InP have been determined for the first time by both transient-capacitance and d.l.t.s. techniques. An activation energy of 270 meV and capture cross-section of 1.4=10−13 cm2 have been measured.
Inspec keywords: semiconductor epitaxial layers; indium compounds; hole traps; capacitance; III-V semiconductors; deep levels
Other keywords:
Subjects: Electrical conductivity of II-VI and III-V semiconductors; Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators); Impurity and defect levels in tetrahedrally bonded nonmetals; II-VI and III-V semiconductors; Electronic properties of semiconductor thin films
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